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[PS-1-09] Ge nMOSFETs with GeOx Passivation Formed by 450℃ Oxygen RTA Postoxidation

^○Y. Xu¹, H. Wang¹, G. Han¹, Y. Liu¹, J. Zhang¹, Y. Hao¹ (1.Xidian Univ. (China))

https://doi.org/10.7567/SSDM.2019.PS-1-09