A Junctionless SOI FET with Channel Thinning by Ion Implantation (CTIFET) and its application to 6T-SRAM Cell

P.K. Huang

doi:https://doi.org/10.7567/SSDM.2019.PS-1-12

1:00 PM - 3:00 PM

[PS-1-12] A Junctionless SOI FET with Channel Thinning by Ion Implantation (CTIFET) and its application to 6T-SRAM Cell

^○P.K. Huang¹, H.Y. Chen¹, S.J. Wang^1,2, R.M. Ko², Y.C. Huang¹, M.H. Chiang¹ (1.Dept. of Electrical Eng., National Cheng Kung Univ. (Taiwan), 2.College of Electrical Eng. and Computer Sci., National Cheng Kung Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2019.PS-1-12

2019 International Conference on Solid State Devices and Materials

[PS-1-12] A Junctionless SOI FET with Channel Thinning by Ion Implantation (CTIFET) and its application to 6T-SRAM Cell