Impact of Hafnium Oxide-Based Ferroelectric Material on Monolayer Black Phosphorus Transistor for Negative Capacitance and Memory Application

K.-T. Chen

doi:https://doi.org/10.7567/SSDM.2019.PS-1-16

13:00 〜 15:00

[PS-1-16] Impact of Hafnium Oxide-Based Ferroelectric Material on Monolayer Black Phosphorus Transistor for Negative Capacitance and Memory Application

^○K.-T. Chen¹, Y.-F. Chung¹, Y.-T. Tang³, M.-H. Lee², S.-T. Chang¹ (1.National Chung Hsing Univ. (Taiwan), 2.National Taiwan Normal Univ. (Taiwan), 3.Taiwan Semiconductor Research Institute (TSRI) (Taiwan))

https://doi.org/10.7567/SSDM.2019.PS-1-16

2019 International Conference on Solid State Devices and Materials

[PS-1-16] Impact of Hafnium Oxide-Based Ferroelectric Material on Monolayer Black Phosphorus Transistor for Negative Capacitance and Memory Application