Memory window and retention time of double back gate Z<sup>2</sup>-FET

Y. Kim

doi:https://doi.org/10.7567/SSDM.2019.PS-1-18

1:00 PM - 3:00 PM

[PS-1-18] Memory window and retention time of double back gate Z²-FET

^○Y. Kim¹, S. Kwon², F. Gamiz³, P. Galy⁵, S. Cristolovenau⁴ (1.KIST (Korea), 2.Univ. of Hanyang (Korea), 3.Univ. of Granada (Spain), 4.INPG (France), 5.STMicron (France))

https://doi.org/10.7567/SSDM.2019.PS-1-18

2019 International Conference on Solid State Devices and Materials

[PS-1-18] Memory window and retention time of double back gate Z2-FET

[PS-1-18] Memory window and retention time of double back gate Z²-FET