Enhanced Electrical Performance and Reliability of Ti-IGZO Thin-Film Transistors with Hf<sub>x</sub>Al<sub>1-x</sub>O Gate Dielectrics

J.H. Wu

doi:https://doi.org/10.7567/SSDM.2019.PS-10-01

13:00 〜 15:00

[PS-10-01] Enhanced Electrical Performance and Reliability of Ti-IGZO Thin-Film Transistors with Hf_xAl_1-xO Gate Dielectrics

^○J.H. Wu¹, B.C. You¹, S.J. Wang^1,2, R.M. Ko², C.E. Lin¹ (1.Institute of Microelectronics, Dept. of Electrical Engineering, National Cheng Kung Univ., Tainan (Taiwan), 2.College of Electrical Engineering and Computer Science, National Cheng Kung Univ., Tainan (Taiwan))

https://doi.org/10.7567/SSDM.2019.PS-10-01

2019 International Conference on Solid State Devices and Materials

[PS-10-01] Enhanced Electrical Performance and Reliability of Ti-IGZO Thin-Film Transistors with HfxAl1-xO Gate Dielectrics

[PS-10-01] Enhanced Electrical Performance and Reliability of Ti-IGZO Thin-Film Transistors with Hf_xAl_1-xO Gate Dielectrics