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[PS-4-07] The effect of biaxial stress on the carrier-transport properties at SiO₂/4H-SiC interfaces

^○W. Fu¹, A. Ueda², H. Yano¹, S. Harada², T. Sakurai¹ (1.Univ. of Tsukuba (Japan), 2.AIST (Japan))

https://doi.org/10.7567/SSDM.2019.PS-4-07