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[PS-4-08] A LOCal Oxidation of SiC (LOCOSiC) Process for 4H-SiC Integrated Circuits

B.-Y. Tsui¹, Y.-R. Jhuang¹,^○J.-C. Cheng¹ (1.National Chiao Tung Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2019.PS-4-08