1:00 PM - 3:00 PM

[PS-4-25 (Late News)] Demonstration of m-plane GaN metal-oxide-semiconductor field-effect transistors

^○H. Okumura¹, T. Takahashi², M. Shimizu² (1.Univ. of Tsukuba (Japan), 2.AIST (Japan))

https://doi.org/10.7567/SSDM.2019.PS-4-25