SiC Quantum Dots in Si-Oxide Layer Fabricated by Double Hot-Si<sup>+</sup>/C<sup>+</sup>-Ion Implantation Technique

13:00 〜 15:00

[PS-8-01] SiC Quantum Dots in Si-Oxide Layer Fabricated by Double Hot-Si⁺/C⁺-Ion Implantation Technique

T. Mizuno¹,^○R. Kanazawa¹, T. Aoki¹, T. Sameshima² (1.Kanagawa Univ. (Japan), 2.Tokyo Univ. of Agri. and Tech. (Japan))