13:00 〜 15:00

[PS-8-10] A MoS₂ channel-based Ferro- FET with charge trapping and switching effects

^○M. Zhao¹, K. Huang¹, X. Liu¹, H. Liu¹ (1.Inst. of Microelectronics of Chinese Academy of Sciences (China))

https://doi.org/10.7567/SSDM.2019.PS-8-10