The Japan Society of Applied Physics

10:57 AM - 10:59 AM

[PS-1-07] The Evaluation of PtHfSi/n-Si(100) Schottky Barrier Height by Boron Dopant Segregation with Short Annealing Duration

R.M.D. Mailig1, M.G. Kim1, S. Ohmi1 (1.Tokyo Tech (Japan))