The Japan Society of Applied Physics

2019 International Conference on Solid State Devices and Materials

2019 International Conference on Solid State Devices and Materials

2019年9月2日 〜 2019年9月5日
Nagoya University

11:11 〜 11:13

[PS-2-14] Low Power Characteristic of HfO2 Based RRAM Device with Insertion of Si Film

○X. Ding1, Y. Feng1, W. Shen1, L. Liu1 (1.Peking Univ. (China))