11:19 〜 11:21

[PS-4-18] High Frequency AlGaN/GaN T-gate HEMTs on Extreme Low Resistivity Silicon Substrates

C.-H. Li¹,^○Y. Liu¹, W.-C. Hsu², C.-Y. Chuang², J.-Z. Liu², S.S.H. Hsu¹ (1.National Tsing Hua Univ. (Taiwan), 2.Global Wafers Corp. (Taiwan))