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[PS-4-19] A Method for Accurate Extracting the Properties of Border Traps in Lateral GaN Power MOSFET with a Compact Distributed Network Model

^○R. Yin¹, Y. Li¹, W. Lin², C.P. Wen¹, Y.L. Hao¹, Y. Fu¹, M. Wang¹ (1.Inst. of Microelectronics, Peking Univ. (China), 2.School of Physics, Peking Univ. (China))