Demonstration of n-MOSFET operation and internal charge analysis of SiO2/Al2O3 gate dielectric on (111) oriented 3C-SiC

11:39 AM - 11:41 AM

[PS-4-28 (Late News)] Demonstration of n-MOSFET operation and internal charge analysis of SiO₂/Al₂O₃ gate dielectric on (111) oriented 3C-SiC

^○R. Oka¹, K. Yamamoto¹, D. Wang¹, H. Nakashima¹, S. Hishiki², K. Kawamura² (1.Kyushu Univ. (Japan), 2.Air Water Inc. (Japan))