2019 International Conference on Solid State Devices and Materials

Sep 2, 2019 - Sep 5, 2019
Nagoya University

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779 results (141 - 150)

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[F-2-02 (Invited)] Nonlinear Optical Application of Nitride Semiconductors: Polarity-Inverted Waveguides and Microcavities

^○R. Katayama¹, M. Uemukai¹, T. Tanikawa¹ (1.Osaka Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Tue. Sep 3, 2019 4:15 PM - 4:45 PM |PDF Download

[F-2-03] Fabrication of GaN high-aspect fine nano-hole array structures by hydrogen atmosphere anisotropic thermal etching with ammonia gas

^○Y. Moriya¹, Y. Ooe¹, Y. Kawasaki¹, D. Ito¹, A. Kikuchi^1,2 (1.Sophia Univ. (Japan), 2.Sophia Photonics Res. Center (Japan))

2019 International Conference on Solid State Devices and Materials |Tue. Sep 3, 2019 4:45 PM - 5:00 PM |PDF Download

[F-2-04] MBE Self-Assembled Growth of InGaN Nanorods on Patterned Sapphire Substrate with Enhanced Photoluminescence Performance

^○J. Shen^1,2,3, Y.F. Yu², Y. Gan¹, G. Li², H. Amano³ (1.Harbin Inst. of Tech. (China), 2.South China Univ. of Tech. (China), 3.Nagoya Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Tue. Sep 3, 2019 5:00 PM - 5:15 PM |PDF Download

[F-2-05] Experimental Studies and Model Analysis on Potential Fluctuation in InGaN Quantum-Well Layers

^○T. Fujita¹, S. Sakai¹, Y. Ikeda¹, A.A. Yamaguchi¹, Y. Kanitani², S. Tomiya² (1.Kanazawa Inst. Tech. (Japan), 2.Sony (Japan))

2019 International Conference on Solid State Devices and Materials |Tue. Sep 3, 2019 5:15 PM - 5:30 PM |PDF Download

[F-4-01 (Invited)] 2D Oxide and Hydroxide Nanosheets: Synthesis, Layer-by-Layer Assembly and Function Design

^○T. Sasaki¹, Y. Ebina¹, N. Sakai¹, R. Ma¹, M. Osada¹ (1.NIMS (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 3:30 PM - 4:00 PM |PDF Download

[F-4-02] Synthesis of Ge-based Nanosheet Bundles Using Calcium Germanides as Templates in IP6 Aqueous Solution

^○V. Saxena¹, Y. Shimura², H. Tatusoka¹ (1.GSIST, Shizuoka Univ. (Japan), 2.Res. Inst. of Electronics, Shizuoka Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 4:00 PM - 4:15 PM |PDF Download

[F-4-03] Growth of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface

^○M. Kobayashi¹, A. Ohta¹, M. Kurosawa¹, M. Araidai¹, M. Ikeda¹, N. Taoka¹, T. Shimizu², K. Makihara¹, S. Miyazaki¹ (1.Nagoya Univ. (Japan), 2.Kansai Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 4:15 PM - 4:30 PM |PDF Download

[F-5-01] Ab initio Study for Adsorption and Desorption Behavior at Step Edges of AlN(0001) and GaN(0001) Surfaces

^○T. Akiyama¹, T. Ohka¹, K. Nakamura¹, T. Ito¹ (1.Mie Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Thu. Sep 5, 2019 9:00 AM - 9:15 AM |PDF Download

[F-5-02] Gallium Diffusion and Ammonia Decomposition on Growing GaN Surface: First Principles Molecular Dynamics Simulations

^○K.M. Bui¹, M. Boero^1,2, K. Shiraishi¹, A. Oshiyama¹ (1.Nagoya Univ. (Japan), 2.Univ. of Strasbourg (France))

2019 International Conference on Solid State Devices and Materials |Thu. Sep 5, 2019 9:15 AM - 9:30 AM |PDF Download

[F-5-03] Novel approach for Growth Mechanism of Atomic Layer Epitaxy of GaAs and AlAs

^○N. Ohtsuka¹, M. Oda¹, T. Eshita^1,2, I. Tanaka¹, C. Itoh¹ (1.Wakayama Univ. (Japan), 2.Fujitsu Semiconductor LTD. (Japan))

2019 International Conference on Solid State Devices and Materials |Thu. Sep 5, 2019 9:30 AM - 9:45 AM |PDF Download

779 results (141 - 150)

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