Low Contact Resistance between Sputtered-MoS<sub>2</sub> and Self-Aligned-TiSi<sub>2</sub> Films Treated by Higher-Temperature Forming-Gas Annealing

Satoshi Igarashi

doi:https://doi.org/10.7567/SSDM.2020.H-3-04

09:45 〜 10:00

[H-3-04] Low Contact Resistance between Sputtered-MoS₂ and Self-Aligned-TiSi₂ Films Treated by Higher-Temperature Forming-Gas Annealing

〇Satoshi Igarashi¹, Yusuke Mochiduki¹, Haruki Tanigawa¹, Masaya Hamada¹, Kentaro Matsuura¹, Iriya Muneta¹, Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Hitoshi Wakabayashi¹ (1. Tokyo Tech(Japan))

https://doi.org/10.7567/SSDM.2020.H-3-04

2020 International Conference on Solid State Devices and Materials

[H-3-04] Low Contact Resistance between Sputtered-MoS2 and Self-Aligned-TiSi2 Films Treated by Higher-Temperature Forming-Gas Annealing

[H-3-04] Low Contact Resistance between Sputtered-MoS₂ and Self-Aligned-TiSi₂ Films Treated by Higher-Temperature Forming-Gas Annealing