14:15 〜 14:30

[H-9-02] ZrS₂ Ambipolar FETs with Schottky-Barrier Contact to Near-Midgap TiN Film Controlled by Top-Gate TiN/Al₂O₃ Stacks

〇Masaya Hamada¹, Kentaro Matsuura¹, Takuya Hamada¹, Iriya Muneta¹, Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Hitoshi Wakabayashi¹ (1. Tokyo Tech.(Japan))

https://doi.org/10.7567/SSDM.2020.H-9-02