ALD-ZrO<sub>2 </sub>Gate Dielectric with Suppressed Interfacial Oxidation for High Performance MoS<sub>2</sub> Top Gate MOSFETs

WENHSIN CHANG

doi:https://doi.org/10.7567/SSDM.2020.H-9-03

14:30 〜 14:45

[H-9-03] ALD-ZrO₂Gate Dielectric with Suppressed Interfacial Oxidation for High Performance MoS₂ Top Gate MOSFETs

〇WENHSIN CHANG¹, Naoya Okada¹, Masayo Horikawa¹, Takahiko Endo², Yasumitsu Miyata², Toshifumi Irisawa¹ (1. Natl. Inst. Adv. Indus. Sci. Tech.(Japan), 2. Tokyo Metropolitan Univ.(Japan))

https://doi.org/10.7567/SSDM.2020.H-9-03

2020 International Conference on Solid State Devices and Materials

[H-9-03] ALD-ZrO2 Gate Dielectric with Suppressed Interfacial Oxidation for High Performance MoS2 Top Gate MOSFETs

[H-9-03] ALD-ZrO₂Gate Dielectric with Suppressed Interfacial Oxidation for High Performance MoS₂ Top Gate MOSFETs