TiN/MgO/Si memrisitive devices as a selectorless synapse for ultralow-power analog neuron chip and time-series applications

Takao Marukame

doi:https://doi.org/10.7567/SSDM.2020.I-5-02

14:30 〜 14:45

[I-5-02] TiN/MgO/Si memrisitive devices as a selectorless synapse for ultralow-power analog neuron chip and time-series applications

〇Takao Marukame¹, Koichi Mizushima¹, Kumiko Nomura¹, Junichi Sugino², Toshimitsu Kitamura², Koji Takahashi², Yutaka Tamura², Yoshifumi Nishi¹ (1. Toshiba Corp.(Japan), 2. Toshiba Inf. Sys. (Japan) Corp.(Japan))

https://doi.org/10.7567/SSDM.2020.I-5-02

2020 International Conference on Solid State Devices and Materials

[I-5-02] TiN/MgO/Si memrisitive devices as a selectorless synapse for ultralow-power analog neuron chip and time-series applications