17:15 〜 17:30

[K-2-06] High Carrier Mobility of Sn-Doped Ge Thin-Films (~20 nm) on Insulator by Interface-Modulated Solid-Phase Crystallization

〇Masanori Chiyozono¹, Xiangsheng Gong¹, Taizoh Sadoh¹ (1. Kyushu Univ.(Japan))

https://doi.org/10.7567/SSDM.2020.K-2-06