[D-8-03] New 1200V Bidirectional FS-IGBT (BFS-IGBT) with Short-Circuit Capability

〇Masahiro Tanaka¹, Naoki Abe¹, Akio Nakagawa² (1. Nihon Synopsys G.K.(Japan), 2. Nakagawa Consulting Office, LLC.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月30日(水) 11:45 〜 12:00 |PDF ダウンロード

[D-8-04] Analysis of Recovery Oscillation Inhibition for Cathode Design of a 1200 V Silicon Diode Using an LCR Circuit Model

〇Kaori Fuse¹, Keiko Kawamura¹, Tomoko Matsudai¹ (1. Toshiba Electronic Devices & Storage Corp.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月30日(水) 12:00 〜 12:15 |PDF ダウンロード

[D-8-05] A Design Direction of Low-Voltage Field-Plate Power MOSFETs for FOM Limit

〇Taichi Ogawa¹, Wataru Saito¹, Shin-ichi Nishizawa¹ (1. Kyushu Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月30日(水) 12:15 〜 12:30 |PDF ダウンロード

[D-9-01] Thermal Stability of alpha-(Al_xGa_1-x)₂O₃ Films Grown on C-Plane Sapphire Substrates

〇Riena Jinno¹, Kentaro Kaneko¹, Shizuo Fujita¹ (1. Kyoto Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月30日(水) 14:00 〜 14:15 |PDF ダウンロード

[D-9-02] Photo-induced Conductivity Transient in n-type β-(Al_0.16Ga_0.84)₂O₃ and β-Ga₂O₃

Maria Gouveia^1,2, 〇Aboulaye Traore^1,3, Hironori Okumura¹, Cedric Mannequin¹, Takeaki Sakurai¹ (1. University of Tsukuba(Japan), 2. University of Grenoble-Alpes(France), 3. AIST(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月30日(水) 14:15 〜 14:30 |PDF ダウンロード

[D-9-03] Study of Ion-implanted Nitrogen Related Defects in Diamond Schottky Barrier Diode by Transient Photocapacitance Spectroscopy

〇Junjie Guo^1,2, Aboulaye Traore¹, Muhammad Hafiz Bin Abu Bakar^1,2, Masahiko Ogura², Satoshi Yamasaki^1,2, Toshiharu Makino^1,2, Takeaki Sakurai¹ (1. Univ. of Tsukuba(Japan), 2. AIST(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月30日(水) 14:30 〜 14:45 |PDF ダウンロード

[D-9-04] Investigation of Acceptable Breakdown Voltage Variation for Parallel-Connected SiC-MOSFET during UIS Test

〇Zaiqi Lou¹, Wataru Saito¹, Shin-ichi Nishizawa¹ (1. Kyushu Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月30日(水) 14:45 〜 15:00 |PDF ダウンロード

[D-9-05] An Electrothermal Compact Model of SiC MOSFETs for Simulating Unclamped Inductive Switching Tests

〇Kyohei Shimozato¹, Yohei Nakamura¹, Song Bian¹, Takashi Sato¹ (1. Kyoto University(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月30日(水) 15:00 〜 15:15 |PDF ダウンロード

[D-9-06] Altitude Dependent Failure Rate Calculation for High Power Semiconductor Devices in Aviation Electronics

〇srikanth gollapudi¹, Ichiro Omura¹ (1. Kyushu Institute of Technology(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月30日(水) 15:15 〜 15:30 |PDF ダウンロード

[E-1-01] Power Scaling in Photonic Crystal Surface Emitting Laser Arrays

〇Ben Christopher King¹, Katherine J Rae¹, Adam F McKenzie^1,2, Aleksandr Boldin¹, Daehyun Kim¹, Neil D Gerrard¹, Guangrui Li¹, Kenichi Nishi³, Keizo Takemasa³, Mitsuru Sugawara³, Richard J. E. Taylor¹, David T. D. Childs¹, Richard A Hogg¹ (1. University of Glasgow(UK), 2. CST Global Limited(UK), 3. QD Laser Inc.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月28日(月) 14:00 〜 14:15 |PDF ダウンロード