[J-4-03] The Use of a Patterned NiO Capping Layer to Improve Photoresponsivity of Ultraviolet Photodetectors Based on IGZO Field Effect Diodes<gdiv></gdiv>

〇Meng-Yung Su¹, Shui-Jinn Wang¹, Rong-Ming Ko² (1. Inst. of Microelectronics, Dept. of Electrical Engineering, National Cheng Kung University(Taiwan), 2. College of Electrical Engineering and Computer Science, National Cheng Kung University(Taiwan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 11:45 〜 12:00 |PDF ダウンロード

[J-4-04] High-Performance Source-Follower-Based ITZO TFT Circuits for Organic Active Pixel Image Sensors

〇Koki Imamura¹, Toshikatsu Sakai¹, Tomomi Takagi¹, Keitada Mineo¹, Toshihisa Watabe¹, Hiroto Sato¹, Satoshi Aihara¹ (1. NHK Sci. & Tech. Res. Labs.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 12:00 〜 12:15 |PDF ダウンロード

[J-4-05] Seed Layer Technique Leading to High-photoresponsivity GaAs Films on Glass

〇Takeshi Nishida^1,2, Takashi Suemasu¹, Kaoru Toko¹ (1. Univ. of Tsukuba(Japan), 2. JSPS Res. Fellow(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 12:15 〜 12:30 |PDF ダウンロード

[J-5-01] Crystal orientation control of single crystal Si strip formed by micro chevron laser beam scanning method to (100)

〇Wenchang Yeh¹, Toshiki Shirakawa¹ (1. Shimane University(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 14:00 〜 14:15 |PDF ダウンロード

[J-5-02] Characteristics of Rapidly Solid Phase Crystallized Amorphous Silicon Films Formed by Micro-Thermal-Plasma Jet Irradiation

〇Hoa ThiKhanh Nguyen¹, Hiroaki Hanafusa¹, Yuri Mizukawa¹, Shohei Hayashi², Seiichiro Higashi¹ (1. Hiroshima Univ.(Japan), 2. Toray Res. Center(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 14:15 〜 14:30 |PDF ダウンロード

[J-5-03] Synthesis of Liquid-Silicon and its Inkjet Printing

〇maui nakayama¹, Takashi Masuda¹, Kimihiko Saito², Hirotakta Katayama³, Akira Terakawa³ (1. JAIST(Japan), 2. Fukushima Univ.(Japan), 3. Panasonic Corp.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 14:30 〜 14:45 |PDF ダウンロード

[J-5-04] Direct Writing of Si Nanostructures at Room Temperature by Electron Beam

〇Masahiro Mori¹, Masashi Akabori¹, Takashi Masuda¹ (1. JAIST(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 14:45 〜 15:00 |PDF ダウンロード

[J-6-01 (Invited)] Electronic property modulation of transition metal oxides by electrochemical and strain engineering

〇Takayoshi Katase^1,2 (1. Tokyo Tech.(Japan), 2. PRESTO, JST(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 16:00 〜 16:30 |PDF ダウンロード

[J-6-02] Suppression of Channel Shortening and Reduction of S/D Parasitic Resistance in InGaZnO channel BEOL Transistor by Insertion of thermally stable InAlZnO Contact Layer

〇Yuta Sato¹, Hirokazu Fujiwara¹, Nobuyoshi Saito¹, Tomomasa Ueda¹, Keiji Ikeda¹ (1. KIOXIA Corp.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 16:30 〜 16:45 |PDF ダウンロード

[J-6-03] 300mm IGZO nFETs with low-T Ru contacts for localized doping and increased BEOL compatibility

〇Luka Kljucar¹, Quentin Smets¹, Michiel Setten¹, Jerome Mitard¹, Atillio Belmonte¹, Harold Dekkers¹, Lieve Teugels¹, Ming Mao¹, Harinarayanan Puliyalil¹, Jose Ignacio del Agua Borniquel², Romain Delhougne¹, Gouri Sankar Kar¹, Zsolt Tokei¹ (1. IMEC(Belgium), 2. AMAT(Belgium))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 16:45 〜 17:00 |PDF ダウンロード