2020 International Conference on Solid State Devices and Materials

Sep 27, 2020 - Sep 30, 2020

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415 results (11 - 20)

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[A-1-04] Understanding wet annealing effect on phase transition and ferroelectric phase formation for Hf_1-xZr_xO₂ film

〇Shigehisa Shibayama¹, Jotaro Nagano¹, Mitsuo Sakashita¹, Osamu Nakatsuka^1,2 (1. Nagoya Univ.(Japan), 2. IMaSS, Nagoya Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 2:45 PM - 3:00 PM |PDF Download

[A-1-05] Thickness Scaling on Ferroelectric Al_0.8Sc_0.2N Films

〇Sunglin TSAI¹, Takuya Hoshii¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹, Kuniyuki Kakushima¹ (1. Tokyo Inst.of Tech.(Japan))

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 3:00 PM - 3:15 PM |PDF Download

[A-1-06] Design and Simulation of Highly-Efficient Metal-Ferroelectric-Nanosheet Line-Tunnel FETs for Sub-5-nm Technology Nodes

〇Narasimhulu Thoti¹, Yiming Li Li¹, Sekhar Reddy Kola¹, Seiji Samukawa² (1. National Chiao Tung Univ.(Taiwan), 2. Tohoku Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 3:15 PM - 3:30 PM |PDF Download

[A-3-01 (Invited)] Materials and Layer Transfer Process Technologies for Heterogeneous 3D Integration of Germanium on Silicon

〇Willy Rachmady¹ (1. Intel Corporation(United States of America))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 9:00 AM - 9:30 AM |PDF Download

[A-3-02] Implementation of Asymmetric Channel Implant in FDSOI Technology for Superior Analog Performance

〇Luca - Pirro¹, Alban Zaka¹, Tom Hermann¹, Martin Majer¹, Jan Hoentschel¹ (1. GLOBALFOUNDRIES(Germany))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 9:30 AM - 9:45 AM |PDF Download

[A-3-03] Sub-35 nm SiC Strained nMOSFETs with Super-400 GHz f_T for mm-wave CMOS Design

〇Jyh-Chyurn Guo¹, Adhi Cahyo Wijaya¹, Jinq-Min Lin¹ (1. National Chiao-Tung University(Taiwan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 9:45 AM - 10:00 AM |PDF Download

[A-3-04] New Observation and Mechanism of Flicker Noise and Random Telegraph Noise in Sub-40nm SiC Strained nMOSFETs

〇Jyh-Chyurn Guo¹, Adhi Cahyo Wijaya¹, Jinq-Min Lin¹ (1. National Chiao-Tung University(Taiwan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 10:00 AM - 10:15 AM |PDF Download

[A-3-05] Investigation of Capacitor-less Integrate and Fire Neuron by Using Double Gate PN-Body Tied SOI-FET

〇Takayuki Mori¹, Jiro Ida¹ (1. Kanazawa Inst. of Tech.(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 10:15 AM - 10:30 AM |PDF Download

[A-4-01 (Invited)] Ge and GeSn-based Nano-electronic Devices and Photo Detectors

〇Xiao Gong¹, Ying Wu¹, Dian Lei¹, Shengqiang Xu¹, Kaizhen Han¹ (1. National University of Singapore(Singapore))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 11:00 AM - 11:30 AM |PDF Download

[A-4-02 (Late News)] Thermally Oxidized Yttrium and Scandium Gate Dielectrics on Germanium with High Interfacial and Film Qualities

〇Hiroki Kanakogi¹, Wei-Chen Wen¹, Keisuke Yamamoto¹, Dong Wang¹, Hiroshi Nakashima² (1. Interdisciplinary Graduate School of Engineering Sci., Kyushu Univ.(Japan), 2. Global Innovation Center, Kyushu Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 11:30 AM - 11:45 AM |PDF Download

415 results (11 - 20)

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