High Breakdown Voltage (-580 V) in (001) Vertical-Type 2DHG Diamond MOSFET by p<sup>-</sup>-drift layer

Kosuke Ota

doi:https://doi.org/10.7567/SSDM.2021.D-3-03

09:37 〜 09:44

[D-3-03] High Breakdown Voltage (-580 V) in (001) Vertical-Type 2DHG Diamond MOSFET by p^--drift layer

〇Kosuke Ota¹、Jun Tsunoda¹、Naoya Niikura¹、Aoi Morishita¹、Atsushi Hiraiwa¹、Hiroshi Kawarada^1,2 (1.Waseda Univ.、2.The Kagami Memorial Lab. for Materials Sci. and Tech.)

https://doi.org/10.7567/SSDM.2021.D-3-03

2021 International Conference on Solid State Devices and Materials

[D-3-03] High Breakdown Voltage (-580 V) in (001) Vertical-Type 2DHG Diamond MOSFET by p--drift layer

[D-3-03] High Breakdown Voltage (-580 V) in (001) Vertical-Type 2DHG Diamond MOSFET by p^--drift layer