9:37 AM - 9:44 AM

[D-3-03] High Breakdown Voltage (-580 V) in (001) Vertical-Type 2DHG Diamond MOSFET by p^--drift layer

〇Kosuke Ota¹, Jun Tsunoda¹, Naoya Niikura¹, Aoi Morishita¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.The Kagami Memorial Lab. for Materials Sci. and Tech.)

https://doi.org/10.7567/SSDM.2021.D-3-03