Lowest contact resistance for high drain current density &gt;1A/mm at Diamond MOSFETs with heavily boron-doped source and drain

Fuga Asai, Ken Kudara, Masakazu Arai, Yukiko Suzuki, Atsushi Hiraiwa, Hiroshi Kawarada

doi:https://doi.org/10.7567/SSDM.2021.D-3-05

9:51 AM - 9:58 AM

[D-3-05] Lowest contact resistance for high drain current density >1A/mm at Diamond MOSFETs with heavily boron-doped source and drain

〇Fuga Asai¹, Ken Kudara¹, Masakazu Arai¹, Yukiko Suzuki¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.School of Fundamental Science & Engineering Waseda Univ., 2.Kagami Memorial Research Institute for Materials Science and Technology, Waseda Univ.)

https://doi.org/10.7567/SSDM.2021.D-3-05

2021 International Conference on Solid State Devices and Materials

[D-3-05] Lowest contact resistance for high drain current density >1A/mm at Diamond MOSFETs with heavily boron-doped source and drain