Lowest contact resistance for high drain current density &gt;1A/mm at Diamond MOSFETs with heavily boron-doped source and drain

Fuga Asai

doi:https://doi.org/10.7567/SSDM.2021.D-3-05

09:51 〜 09:58

[D-3-05] Lowest contact resistance for high drain current density >1A/mm at Diamond MOSFETs with heavily boron-doped source and drain

〇Fuga Asai¹、Ken Kudara¹、Masakazu Arai¹、Yukiko Suzuki¹、Atsushi Hiraiwa¹、Hiroshi Kawarada^1,2 (1.School of Fundamental Science & Engineering Waseda Univ.、2.Kagami Memorial Research Institute for Materials Science and Technology, Waseda Univ.)

https://doi.org/10.7567/SSDM.2021.D-3-05

2021 International Conference on Solid State Devices and Materials

[D-3-05] Lowest contact resistance for high drain current density >1A/mm at Diamond MOSFETs with heavily boron-doped source and drain