Reduction of Interface State Density in the SiC MOS Structures by a Non-oxidation Process

10:45 〜 11:15

[D-4-01 (Invited)] Reduction of Interface State Density in the SiC MOS Structures by a Non-oxidation Process

〇Tsunenobu Kimoto¹、Keita Tachiki¹、Takuma Kobayashi^1,2、Yuichiro Matsushita² (1.Kyoto Univ.、2.Tokyo Inst. Tech.)