"Enhancement of Channel Mobility in 4H-SiC Trench MOSFET by Inducing Stress at SiO2/SiC Gate Interface"

Eiji Kagoshima

doi:https://doi.org/10.7567/SSDM.2021.D-4-04

11:29 〜 11:36

[D-4-04] "Enhancement of Channel Mobility in 4H-SiC Trench MOSFET by Inducing Stress at SiO2/SiC Gate Interface"

〇Eiji Kagoshima¹、Wakana Takeuchi²、Katsuhiro Kutsuki³、Mitsuo Sakashita⁴、Hirokazu Fujiwara¹、Osamu Nakatsuka^4,5 (1.MIRISE Technologies Corp.、2.Aichi Institute of Tech.、3.TOYOTA CENTRAL R&D LABS., Inc.、4.Graduate School of Eng., Nagoya Univ.、5.Inst. of Materials and Systems for Sustainability, Nagoya Univ.)

https://doi.org/10.7567/SSDM.2021.D-4-04

2021 International Conference on Solid State Devices and Materials

[D-4-04] "Enhancement of Channel Mobility in 4H-SiC Trench MOSFET by Inducing Stress at SiO2/SiC Gate Interface"