2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

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633 results (301 - 310)

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[N-4-02] Restoration of Degraded Reverse Bias Safety Operating Area (RBSOA) in 3300V Scaled IGBTs by Non-Proportional Scaling Method

^○Xiang Zhou¹, Munetoshi Fukui¹, Kiyoshi Takeuchi¹, Takuya Saraya¹, Wataru Saito², Toshiro Hiramoto¹ (1. The Univ. of Tokyo (Japan), 2. Kyushu Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |Thu. Sep 7, 2023 11:00 AM - 11:15 AM |PDF Download

[N-4-03] Study on Stress in Trench Structures during Silicon IGBTs Process – Oxidation

^○Bozhou Cai¹, Jiuyang Yuan¹, Yoshiji Miyamura¹, Wataru Saito¹, Shin-ichi Nishizawa¹ (1. Univ. of Kyushu (Japan))

2023 International Conference on Solid State Devices and Materials |Thu. Sep 7, 2023 11:15 AM - 11:30 AM |PDF Download

[N-4-04] Wafer Warpage Modeling for Process Integration of Trench Field Plate Power MOSFETs

^○Hiroaki Kato¹, Bozhou Cai¹, Jiuyang Yuan¹, Yoshiji Miyamura¹, Shin-ichi Nishizawa¹, Wataru Saito¹ (1. Kyushu Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |Thu. Sep 7, 2023 11:30 AM - 11:45 AM |PDF Download

[N-4-05] Drain Leakage Current Control of Si Power MOSFETs with Fast Recovery Diodes

^○Hiroki Nemoto¹, Tsuyoshi Kachi¹, Hiroaki Kato¹, Katsura Miyashita¹ (1. Toshiba Electronic Devices & Storage Corp. (Japan))

2023 International Conference on Solid State Devices and Materials |Thu. Sep 7, 2023 11:45 AM - 12:00 PM |PDF Download

[N-5-01] Low-temperature post-nitridation O ₂ annealing to reduce the fixed charge density while maintaining the high SiC surface N density

^○Tianlin Yang¹, Takashi Onaya², Koji Kita^1,2 (1. Department of Materials Engineering, The Univ. of Tokyo (Japan), 2. Department of Advanced Materials Sci., The Univ. of Tokyo (Japan))

2023 International Conference on Solid State Devices and Materials |Fri. Sep 8, 2023 9:00 AM - 9:15 AM |PDF Download

[N-5-02] Role of P(O ₂) in Annealing of the SiO ₂/SiC Stack Formed by Si Deposition plus Oxidation

^○Qian Zhang^1,2, Nannan You¹, Jiayi Wang¹, Yang Xu¹, Yu Wang^1,2, Kuo Zhang^1,2, Shengkai Wang^1,2 (1. Inst. of Microelectronics of the Chinese Academy of Sci. (China), 2. Univ. of Chinese Academy of Sci. (China))

2023 International Conference on Solid State Devices and Materials |Fri. Sep 8, 2023 9:15 AM - 9:30 AM |PDF Download

[N-5-03] Anomalous Impact of Mechanical Uniaxial Stress on Threshold Voltage of 4H-SiC (0001) MOSFET

^○Qiao Chu¹, Masahiro Masunaga², Akio Shima², Koji Kita¹ (1. The University of Tokyo (Japan), 2. Hitachi, Ltd. R&D Group (Japan))

2023 International Conference on Solid State Devices and Materials |Fri. Sep 8, 2023 9:30 AM - 9:45 AM |PDF Download

[N-5-04] Theoretical Analysis of Electron Scattering by Step-Terrace Structures at SiC Metal-Oxide-Semiconductor Interface

^○Keisuke Utsumi¹, Hajime Tanaka¹, Nobuya Mori¹ (1. Osaka Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |Fri. Sep 8, 2023 9:45 AM - 10:00 AM |PDF Download

[N-5-05] The Influence of Boron Concentration on the Reduction of SiO ₂/4H-SiC MOS Interface Defect Density with Preserved Flatband Voltage Stability

^○Runze Wang¹, Munetaka Noguchi², Hiroshi Watanabe², Koji Kita¹ (1. Univ. of Tokyo (Japan), 2. Mitsubishi Electric Corp. (Japan))

2023 International Conference on Solid State Devices and Materials |Fri. Sep 8, 2023 10:00 AM - 10:15 AM |PDF Download

[N-6-01 (Invited)] High-mobility p-channel field-effect transistors based on hydrogen-terminated diamond/h-BN heterostructures

^○Takahide Yamaguchi¹ (1. NIMS (Japan))

2023 International Conference on Solid State Devices and Materials |Fri. Sep 8, 2023 10:45 AM - 11:15 AM |PDF Download

633 results (301 - 310)

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