2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

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633 results (501 - 510)

[PS-2-19] Effect of Geometrical Variations on Bulk FinFET-Based Capacitorless DRAM

^○Min Seok Kim¹, Sang Ho Lee¹, Jin Park¹, Ga Eon Kang¹, Jun Hyeok Heo¹, So Ra Jeon¹, Jeong Woo Hong¹, Seung Ji Bae¹, In Man Kang¹ (1. Kyungpook National Univ. (Korea))

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[PS-2-20] Improvement of Read Performance using CMOS on Array(COA) in 3D NAND Flash

Daewoong Kang³, ^○Hyowon Kang¹, Hyoungsoo Kim² (1. Korea Int’l School (Korea), 2. California State Polytechnics Uni (United States of America), 3. Soul National Uni (Korea))

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[PS-2-21] High-Speed Operation at 25ns Enabled by Angstrom Layer HZO Technology in MFS IGZO Device with Ultra-Wide Memory Window and Low Thermal Budget

^○CHENG- RUI LIU¹, SHENG-MIN WANG¹, YU-TING CHEN¹, SHAO-CHEN LEE¹, YING-TSAN TANG¹ (1. National Central Univ. (Taiwan))

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[PS-2-22] 2 bit/cell Dynamic Flash Memory with Three Gates

^○Koji Sakui¹, Yisuo Li¹, Yoshihisa Iwata¹, Masakazu Kakumu¹, Nozomu Harada¹ (1. Unisantis Electronics Singapore (Singapore))

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[PS-2-23] Improved Synaptic Plasticity of Li Ion-Gated Transistors with Mg-Doped LiCoO2 Channel for Neuromorphic Computing

^○Samapika Mallik¹, Tohru Tsuruoka², Takashi Tsuchiya³, Kazuya Terabe ⁴ (1. National Inst. for materials sci. (Japan), 2. National Inst. for materials sci. (Japan), 3. National Inst. for materials sci. (Japan), 4. National Inst. for materials sci. (Japan))

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[PS-2-24] Positive Feedback Field Effect Transistor Based on Vertical NAND Flash Structure for In-Memory Computing

^○Junhyeong Lee¹, Misun Cha¹, Min-Woo Kwon¹ (1. Gangneung-Wonju National Univ (Korea))

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[PS-3-01] Development of Low-thermal-budget and Low-electrical-loss Heterogeneous Integration Platform by Glass Substrate and Area-Selective Passivation Technology

^○Mu-Ping Hsu¹, Hsin-Chi Chang¹, Yi-Chieh Tsai¹, Kuan-Neng Chen¹ (1. National Yang Ming Chiao Tung Univ. (Taiwan))

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[PS-3-02] Using a CMOS MEMS Resonator System for Rapid Calibration of Thin Film Deposition Thickness

^○Cheng-Yang Chang¹, Chin-Te Hsin¹, Ying-Zong Juang¹, Sheng-Hsiang Tseng¹ (1. National Applied Research Laboratories Taiwan Semiconductor Research Institute (Taiwan))

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[PS-3-03] On the Study of ESD-Induced Electromigration in CMOS Metallization

^○Yang-Shou Hou¹, Chun-Yu Lin¹ (1. National Taiwan Normal Univ. (Taiwan))

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[PS-3-04] Characteristic Verification of Flexible Printed Circuit Applied to System Circuit and Package with High Frequency and High Speed

^○Meng-Hua TU¹, CHIA-LIN HSIEH¹, Sung-Mao Wu¹, Shang-Chih Chou² (1. National University of Kaohsiung (Taiwan), 2. Taiwan Textile Research Institute (Taiwan))

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633 results (501 - 510)