ICSCRM2019

講演情報

Poster Presentation

Poster Presentation

[Th-P] Poster Presentation

2019年10月3日(木) 13:45 〜 15:45 Annex Hall 1 (Kyoto International Conference Center)

13:45 〜 15:45

[Th-P-36] Analysis of the static characteristics of 4H-SiC Trench MOSFET with novel trench bottom structure

*Hyoung Woo Kim1, Ogyun Seok1, Jeong Hyun Moon1, Wook Bahng1 (1. Korea Electrotechnology Research Institute(Korea))