スケジュール 2 13:45 〜 15:45 [Th-P-36] Analysis of the static characteristics of 4H-SiC Trench MOSFET with novel trench bottom structure *Hyoung Woo Kim1, Ogyun Seok1, Jeong Hyun Moon1, Wook Bahng1 (1. Korea Electrotechnology Research Institute(Korea))