[We-3A] Diodes and Processing

[We-3A-02] Forward Thermionic Field Emission Current and Barrier Height Lowering in Heavily-Doped 4H-SiC Schottky Barrier Diodes

*Masahiro Hara¹, Satoshi Asada¹, Takuya Maeda¹, Tsunenobu Kimoto¹ (1. Kyoto Univ.(Japan))