The 74th JSAP Autumn Meeting,2013

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Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[16a-B5-1~11] 15.4 III-V-group nitride crystals

Mon. Sep 16, 2013 9:00 AM - 12:00 PM B5 (TC2 2F-201)

11:45 AM - 12:00 PM

[16a-B5-11] Field-effect transistors based on InN

○Masaaki Oseki1, Kana Okubo1, Atushi Kobayashi1, Jitsuo Ohta1, Hiroshi Fujioka1,2 (Institute of Industrial Science, The university of Tokyo1, JST-CREST2)

Keywords:窒化インジウム