Suppression of Surface States inside Conduction Band and Effective Mobility Improvement of Ge nMOSFETs by Atomic Deuterium Annealing

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.3 Insulator technology

Tue. Sep 17, 2013 1:00 PM - 6:30 PM B5 (TC2 2F-201)

6:00 PM - 6:15 PM

^○Rui Zhang¹, Ju-Chin Lin¹, Xiao Yu¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (Univ. Tokyo¹)

Keywords:germanium,Atomic deuterium,Surface state