[17p-B5-1~21] 13.3 Insulator technology

▲ [17p-B5-21] Significant Enhancement of High-Ns electron mobility in Ge n-MOSFETs

^○ChoongHyun Lee^1,2, Cimang Lu^1,2, Toshiyuki Tabata^1,2, Tomonori Nishimura^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (The Univ. of Tokyo¹, JST-CREST²)

Keywords:germanium