[17p-B5-1~21] 13.3 絶縁膜技術

▲ [17p-B5-20] Suppression of Surface States inside Conduction Band and Effective Mobility Improvement of Ge nMOSFETs by Atomic Deuterium Annealing

^○張睿，林汝静，玉虓，竹中充，高木信一 (東大院工)

キーワード：germanium,Atomic deuterium,Surface state