9:30 AM - 11:30 AM
[19a-P7-7] The Characteristics of Ion-Implanted Field Plate GaN-HEMT
Keywords:半導体,窒化ガリウム,HEMT
Presentation information
Poster presentation
14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology
[19a-P7-1~14] 14.3 Electron devices and Process technology
Thu. Sep 19, 2013 9:30 AM - 11:30 AM P7 (Davis Memorial Auditorium)