High Speed Lateral Crystallization of Amorphous Germanium Film Induced by Atomospheric Pressure Micro-Thermal-Plasma-Jet Irradiation

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.5 Si process technology

Thu. Sep 19, 2013 1:30 PM - 7:00 PM B4 (TC2 1F-106)

3:00 PM - 3:15 PM

^○(M2)Takahiro Kamikura¹, Shohei Hayashi¹, Seiji Morisaki¹, Shogo Yamamoto¹, Seiichiro Higashi¹ (Hiroshima Univ.¹)

Keywords:熱プラズマジェット,結晶化,ゲルマニウム