1:30 PM - 1:45 PM
○Shohei Hayashi1,2, Seiji Morisaki1, Takahiro Kamikura1, Shogo Yamamoto1, Kohei Sakaike1,2, Muneki Akazawa1, Seiichiro Higashi1 (Hiroshima Univ.1, JSPS Research Fellow DC2)
Oral presentation
13. Semiconductors A (Silicon) » 13.5 Si process technology
Thu. Sep 19, 2013 1:30 PM - 7:00 PM B4 (TC2 1F-106)
△:Young Scientist Oral Presentation Award Applied
▲:English Presentation
▼:Both Award Applied and English Presentation
1:30 PM - 1:45 PM
○Shohei Hayashi1,2, Seiji Morisaki1, Takahiro Kamikura1, Shogo Yamamoto1, Kohei Sakaike1,2, Muneki Akazawa1, Seiichiro Higashi1 (Hiroshima Univ.1, JSPS Research Fellow DC2)
1:45 PM - 2:00 PM
○Seiji Morisaki1, Shohei Hayashi1, Takahiro Kamikura1, Shogo Yamamoto1, Muneki Akazawa1, Kohei Sakaike1, Seiichiro Higashi1 (Graduate School of Advanced Sciences of Matter, Hiroshima University1)
2:00 PM - 2:15 PM
○Keisuke Tanaka1, shohei Hayashi1, Takahiro Kamikura1, Seiichiro Higashi1 (Grad. School of AdSM, Hiroshima Univ.1)
2:15 PM - 2:30 PM
○Lien Mai1, Susumu Horita1 (JAIST1)
2:30 PM - 2:45 PM
○(M1)Tomohide Wakasugi1, Satoshi Chinen1, Tatsuya Okada1, Hiroshi Aozasa1, Takashi Noguchi1, Taketsugu Itoh2 (Ryukyus Univ.1, Itoh Device Consulting2)
2:45 PM - 3:00 PM
○(B)Kenta Moto1, Shin Sakiyama1, Takatsugu Sakai1, Kazutoshi Nakashima1, Kenichiro Takakura1, Isao Tsunoda1 (Kumamoto National College of Technology1)
3:00 PM - 3:15 PM
○(M2)Takahiro Kamikura1, Shohei Hayashi1, Seiji Morisaki1, Shogo Yamamoto1, Seiichiro Higashi1 (Hiroshima Univ.1)
3:15 PM - 3:30 PM
○Shuji Tagawa1, Shoichirou Yamada1, Gota Murai1, Masahiro Yoshimoto1, Yoo Woo Sik2 (Kyoto Institute of Technology1, WaferMasters,Inc.2)
3:30 PM - 3:45 PM
○Shinichi Ogawa1, Tomohiko Iijima1, Ryuichi Sugie2, Naohiko Kawasaki2, Yuji Otsuka2 (AIST1, Toray Res. Ctr.2)
3:45 PM - 4:00 PM
○Ryuhei Iwasaki1, Kohki Nagata1, Motohiro Tomita1, Daisuke Kosemura1, Atsushi Ogura1 (Meiji Univ.1)
Break (4:00 PM - 4:15 PM)
4:15 PM - 4:30 PM
○(DC)Kohei Sakaike1, Shogo Nakamura1, Muneki Akazawa1, Takashi Fukunaga1, Seiji Morisaki1, Shohei Hayashi1, Seiichiro Higashi1 (Hiroshima Univ.1)
4:30 PM - 4:45 PM
○Muneki Akazawa1, Kohei Sakaike1, Shogo Nakamura1, Takashi Fukunaga1, Shohei Hayashi1, Seiji Morisaki1, Seiichiro Hagashi1 (AdSM, Hiroshima Univ.1)
4:45 PM - 5:00 PM
○Masashi Morimoto1, JianBo Laing1, Shora Nishida1, Naoteru Shigekawa1 (Osaka city Univ1)
5:00 PM - 5:15 PM
Misako Matsui1, Ayumi Saito1, ○Hitoshi Habuka1 (Yokohama Nat. Univ.1)
5:15 PM - 5:30 PM
○Misako Matsui1, Hitoshi Habuka1 (Yokohama Nat. Univ.1)
5:30 PM - 5:45 PM
○Kimihiko Imura1, Tatsuya Okada1, Koya Sugihara1, Kiyoharu Shimoda1, Takashi Noguchi1 (Univ. of the Ryukyu1)
5:45 PM - 6:00 PM
○Yasuhiko Yoshimrua1, Shun-ichiro Ohmi1 (Tokyo Institute of Technology1)
6:00 PM - 6:15 PM
○Naoya Okada1,2, Noriyuki Uchida2, Toshihiko Kanayama1,3 (Inst. of Appl. Phys. Univ. of Tsukuba1, AIST-Nanoelectronics Research Institute2, AIST3)
6:15 PM - 6:30 PM
○Ayumi Sakurai1, Hitoshi Habuka1 (Yokohama Nat. Univ.1)
6:30 PM - 6:45 PM
○(B)Tomohiko Nakamura1, Satoshi Shigeno1, Shinya Yoshidomi1, Masahiko Hasumi1, Toshiko Ishii1, Toshiyuki Sameshima1, Yutaka Inouchi2, Masao Naito2, Tomohisa Mizuno3 (TUAT1, Nissin Ion Equipment Co.,Ltd.2, Kanagawa Univ.3)
6:45 PM - 7:00 PM
○Hidenori Osae1, Satoshi Abo1, Fujio Wakaya1, Toshiaki Iwamatsu2, Hidekazu Oda2, Mikio Takai1 (Center for Quantum Science and Technology under Extreme Conditions,Osaka University.1, Renesas Electronics Corporation.2)