Selective Area Growth of InGaN-Based Regularly Arranged Nanocolumns by AlGaN Nanotemplate

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Fri. Sep 20, 2013 9:00 AM - 12:00 PM B5 (TC2 2F-201)

9:30 AM - 9:45 AM

^○Kouji Yamano¹, Katsumi Kishino^1,2, Hiroto Sekiguchi³, Akihiro Wakahara³ (Sophia Univ.¹, Sophia Nanotech Research center², Toyohashi Univ. Tech³)

Keywords:ナノコラム,InGaN,窒化物