[20a-C8-1~12] 13.6 Silicon devices / Integration technology

[20a-C8-7] Gate structure dependence of electrical characteristics in floating-gate type poly-Si channel FinFET flash memories

^○Yongxun Liu¹, Takashi Matsukawa¹, Kazuhiko Endo¹, Shinichi Ouchi¹, Junichi Tsukada¹, Hiromi Yamauchi¹, Yuki Ishikawa¹, Wataru Mizubayashi¹, Yukinori Morita¹, Shinji Migita¹, Hiroyuki Ota¹, Meishoku Masahara¹ (AIST¹)

Keywords:フラッシュメモリ