Characterization of semipolar GaN grown on patterned sapphire substrate by TEM

Presentation information

Regular sessions(Oral presentation)

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Thu. Mar 28, 2013 9:00 AM - 12:00 PM G21 (B5 4F-2405)

^○Takashi Inagaki¹, Keisuke Yamane¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (Yamaguchi Univ.¹)

Keywords:GaN、TEM