[28p-G19-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[28p-G19-4] Influence of N-doping on the properties of ZnO film grown using high-energy H₂O generated by a catalytic reaction

^○Naoya Yamaguchi¹, Eichi Nagatomi¹, Tomohiko Takeuchi¹, Takahiro Kato¹, Kanji Yasui¹ (Nagaoka Univ. Technol.¹)

Keywords:ZnO、触媒反応、CVD