Regular sessions(Oral presentation)

21. Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[28p-G19-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Mar 28, 2013 2:00 PM - 6:30 PM G19 (B5 4F-2403)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[28p-G19-0] Lunch(60min)

[28p-G19-1] Production mechanism of ZnO films from dimethylzinc and catalytically produced water

^○Hironobu Umemoto¹, Takuma Ishikawa¹, Yushin Nishihara¹, Kanji Yasui², Hiroshi Nishiyama², Yasunobu Inoue², Mitsuru Ushijima³ (Shizuoka Univ.¹, Nagaoka Univ. Tech.², Tokyo Electron³)

[28p-G19-2] Homoepitaxial growth of ZnO films grown using high-energy H₂O generated by a catalytic reaction

^○Tomohiko Takeuchi¹, Eichi Nagatomi¹, Naoya Yamaguchi¹, Takahiro Kato¹, Kanji Yasui¹ (Nagaoka. Univ. Technol.¹)

[28p-G19-3] Effect of low-temperature buffer layer on the properties of ZnO films grown on glass substrates using high-energy H₂O generated by a catalytic reaction

^○Kazuki Takezawa¹, Takahiro Oyanagi¹, Takahiro Kato¹, Hironori Katagiri², Kazuo Jimpo², Koichiro Ohishi², Kanji Yasui¹ (Nagaoka Univ. Technol.¹, Nagaoka Nat. Coll. Technol.²)

[28p-G19-4] Influence of N-doping on the properties of ZnO film grown using high-energy H₂O generated by a catalytic reaction

^○Naoya Yamaguchi¹, Eichi Nagatomi¹, Tomohiko Takeuchi¹, Takahiro Kato¹, Kanji Yasui¹ (Nagaoka Univ. Technol.¹)

[28p-G19-5] Effect of annealing on ZnO single-crystalline layer grown on a-plane Al₂O₃ substrate by sputter epitaxy (II)

^○Yuuki Hamada¹, Masayuki Takahashi¹, Hirotoyo Shigeno¹, Hidetaka Tanuma¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (Tokyo Denki University¹)

[28p-G19-6] Fabrication of Atomically-Flat ZnO films on C-Plane Sapphire Substrates by Sputtering

^○Naho Itagaki^1,2, Kazunari Kuwahara¹, Daisuke Yamashita¹, Hyunwoong Seo¹, Kunihiro Kamataki³, Giichiro Uchida¹, Kazunori Koga¹, Masaharu Shiratani¹ (Kyushu Univ¹, JST-PRESTO², Kyushu Univ³)

[28p-G19-7] Growth mode control of ZnMnO films grown on Zn-polar ZnO substrates

^○Tatsuru Nakamura¹, Takeshi Yoshimura¹, Atsushi Ashida¹, Norifumi Fujimura¹ (Osaka Pref. Univ.¹)

[28p-G19-8] Polarity effect on growth mode of pentacene thin films on polar-ZnO single crystal

^○Tatsuru Nakamura¹, Takahiro Nagata², Ryoma Hayakawa², Seungjun Oh³, Nobuya Hiroshiba², Norifumi Fujimura¹, Toyohiro Chikyow², Yutaka Wakayama^2,3 (Osaka Pref. Univ.¹, NIMS², Kyushu Univ.³)

[28p-G19-8.1] Break(15min)

[28p-G19-9] Temperature dependence of excitonic photoluminescence from oxide nanoparticles and bulk crystals

^○Hiroshi Amekura¹, Tarjei Bondevik^1,2 (NIMS¹, Norwegian Univ S&T²)

[28p-G19-10] Size dependence of laser oscillation of WGM by ZnO micro-spheres

^○Koshi Fusazaki¹, Kota Okazaki¹, Mituhiro Higasihata¹, Daisuke Nakamura¹, Tatuo Okada¹ (Kyushu University¹)

[28p-G19-11] Optical characterization of nitrogen-doped Mg_xZn_1-xO thin films

^○Takami Abe¹, Akira Nakagawa¹, Tetsuya Chiba¹, Michiko Nakagawa¹, Shuzo Takahashi¹, Shigeki Chiba¹, Yasuhiro Kashiwaba², Masahiro Daibo¹, Ikuo Niikura¹, Yasube Kashiwaba¹, Tamiya Fujiwara¹, Hiroshi Osada¹ (Iwate Univ.¹, Sendai Nat. College of Tech.²)

[28p-G19-12] I-V characteristic of Au/ZnO Schottky diode

^○（M1）Yuji Kandori¹, Koji Abe¹ (Nagoya Institute of Technology¹)

[28p-G19-13] n-ZnO/p-ZeTe heterojunction characteristics formed by bias voltage PLD and direct bonding

^○Takuya Akao¹, Kazuya Komatsu¹, Yuki Seno¹, Takao Komiyama¹, Yasunori Tyounan¹, Hiroyuki Yamaguchi¹, Takashi Aoyama¹ (Akita Prefectural Univ.¹)

[28p-G19-14] ▲Schottky characteristics dependency on the polarity of PEDOT:PSS/MgZnO interface

^○Sanjay Kumar Mohanta¹, Nobuaki Ohmura¹, Atsushi Nakamura¹, Jiro Temmyo¹ (Shizuoka University¹)

[28p-G19-15] Growth of Ta₂O₅/ZnO:In heterostructure Films by A New Facing-Target Sputtering Method and Its Application to High-Sensitive pH Sensors

^○（M1）Kazuya Mukai¹, Takayuki Onaka¹, Kazuto Koike¹, Toshihiko Maemoto¹, Shigehiko Sasa¹, Mitsuaki Yano¹, Sadao Kadokura², Yutaka Nakamitsu² (Osaka Inst. of Tech., NMRC¹, FTS Corp.²)

[28p-G19-16] Current-voltage characteristics in a Pt/ZnO Schottky photodiode

^○Haruyuki Endo¹, Ritsuo Ohashi², Takashi Abe¹, Kyo Takahashi¹, Yasube Kashiwaba³ (Iwate Ind. Res. Inst.¹, EMC Semiconductor Corporation², Iwate Univ.³)

[28p-G19-17] Electroluminescence of n-ZnO/p-Si heterojunction fabricated by PLD technique with bias voltage application

^○Yuki Seno¹, Takao Komiyama¹, Yasunori Chonan¹, Hiroyuki Yamaguchi¹, Takashi Aoyama¹ (Akita Prefectural Univ.¹)

Session information

[28p-G19-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"