[29p-G19-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[29p-G19-15] Thickness Dependency of Device Performances of Solution-Derived InZnO Thin-Film Transistors

^○Yukihiro Osada¹, Yasuaki Ishikawa¹, Li Lu¹, Yukiharu Uraoka¹ (NAIST¹)

Keywords:酸化物半導体、チャネル膜厚