[29p-G19-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[29p-G19-14] △Effect of fluorine contents in gate insulators on a-InGaZnO thin film transistors

^○Ｈａｒｕｋａ Ｙａｍａｚａｋｉ¹, Ｙａｓｕａｋｉ Ｉｓｈｉｋａｗａ¹, Yoshihiro Ueoka¹, Masaki Fujiwara², Eiji Takahashi², Yasunori Andoh², Yukiharu Uraoka¹ (nara inst. of sci. and tec.¹, nissin electric co.,ltd.²)

Keywords:酸化物半導体