^○ShunKanai¹，HideoSato²，MichihikoYamanouchi^1,2，ShojiIkeda^1,2，YoshinobuNakatani³，FumihiroMatsukura^2,4，HideoOhno^1,2,4 (LNS-RIEC, Tohoku Univ.¹，CSIS, Tohoku Univ.²，Univ. of Electro-Communications³，WPI-AIMR, Tohoku Univ.⁴)

14:15 〜 14:30

▼ [20p-E7-5] Current-induced switching properties under perpendicular magnetic field in magnetic tunnel junctions with perpendicular magnetic easy axis

^○ハンジャン¹，EnobioEliChristopher²，佐藤英夫²，石川慎也¹，山ノ内路彦^1,2，池田正二^1,2,4，深見俊輔²，松倉文礼^1,2,3，大野英男^1,2,3,4 (東北大電気通信研究所¹，東北大 CSIS²，東北大 WPI-AIMR³，東北大 CIES⁴)

14:30 〜 14:45

▼ [20p-E7-6] MgO/FeB/MgO積層膜における磁気異方性の上部MgO層厚依存性

^○堀川喜久¹，石川慎也¹，池田正二^1,2,4，佐藤英夫²，深見俊輔²，山之内路彦^1,2，松倉文礼^1,2,3，大野英男^1,2,3,4 (東北大通研¹，東北大CSIS²，東北大WPI-AIMR³，東北大CIES⁴)

14:45 〜 15:00

▲ [20p-E7-7] X-ray magnetic circular dichroism study of magnetic anisotropy in Ta/CoFeB/MgO/Ta multilayers

^○（DC）DuongLam^1,3，FredericBonell^1,3，YoichiShiota^1,3，KazuhitoTanaka¹，YoshiakiTakahashi^1,3，ShinjiMiwa^1,3，NorikazuMizuochi¹，TeruyaShinjo¹，YoshinoriKotani²，TetsuyaNakamura²，YoshishigeSuzuki^1,3 (Osaka Univ.¹，JASRI /SPring-8²，JST-CREST³)

セッション一覧

10．スピントロニクス・マグネティクス » 10.3 GMR・TMR・磁気記録技術

[17a-E7-34~39] 10.3 GMR・TMR・磁気記録技術

▲ [17a-E7-34] Perpendicular anisotropy in V/Fe_1-xGd_x (x = 0, 10, 20) multilayers

[17a-E7-35] スピネル型酸化物磁性体のKrイオン照射による磁化制御とパターン化

▲ [17a-E7-36] Fabrication of Magnetic Tunnel Junctions with High TMR Ratio and Low Magnetic Anisotropy for Highly Sensitive Magnetic Sensor

[17a-E7-37] CPP型Fe₃Si/FeSi₂人工格子における電流注入磁化反転

▼ [17a-E7-38] Investigation of interfacial specific resistance dependent on Fe-Co alloy composition in CPP-GMR-Tri-layer

▼ [17a-E7-39] RF injection locking in vortex-STO with MgO capped FeB free layer

[20a-E7-1~12] 10.3 GMR・TMR・磁気記録技術

▼ [20a-E7-1] スピントルク発振素子を利用した磁化方向の共鳴読み出し

▲ [20a-E7-2] Magnetic field sensor utilizing a spin-torque oscillator

▲ [20a-E7-3] ナノコンタクト型スピントルク発振素子の連続パルス磁場応答

▲ [20a-E7-4] Dependence of oscillation frequency of spin torque oscillator on applied field magnitude

▲ [20a-E7-5] <001>-textured polycrystalline current-perpendicular-to-plane pseudo spin-valves using full Heusler alloy Co₂Fe(Ga_0.5Ge_0.5)

▼ [20a-E7-6] Structural and magneto-transport properties of CPP-GMR pseudo spin-valves with (110) epitaxial layers of Co₂Fe(Ge_0.5Ga_0.5) Heusler alloy

[20a-E7-7] 下部SAF参照層型-低RA垂直MTJの作製

▲ [20a-E7-8] CoPt/Ru/CoPt参照層を持つFeB/MgO/FeB垂直磁化MTJ素子の磁化過程

▼ [20a-E7-9] CoFeB/Ta/[Co/Pd]強磁性電極を用いた磁気トンネル接合

△ [20a-E7-10] Degree of temperature dependence of TMR ratio of Co₂MnSi/MgO/Co₂MnSi MTJs as a function of Mn composition in Co₂MnSi electrodes

[20a-E7-11] Magnetic tunnel junctions for bio-magnetic field sensor

▲ [20a-E7-12] Magnetic sensors based on MgO-magnetic tunnel junctions with perpendicular magnetized CoFeB sensing layer

[20p-E7-1~7] 10.3 GMR・TMR・磁気記録技術

▼ [20p-E7-1] Temperature dependence of electric-field effect on magnetic properties of Ta/CoFeB/MgO structures investigated by ferromagnetic resonance

▲ [20p-E7-2] Evaluation of voltage-torque through the voltage-induced ferromagnetic resonance

▲ [20p-E7-3] Sub-gigahertz ferromagnetic resonance in magnetic tunnel junction

▲ [20p-E7-4] Magnetization switching by two successive voltage pulses

▼ [20p-E7-5] Current-induced switching properties under perpendicular magnetic field in magnetic tunnel junctions with perpendicular magnetic easy axis

▼ [20p-E7-6] MgO/FeB/MgO積層膜における磁気異方性の上部MgO層厚依存性

▲ [20p-E7-7] X-ray magnetic circular dichroism study of magnetic anisotropy in Ta/CoFeB/MgO/Ta multilayers

セッション一覧

10．スピントロニクス・マグネティクス » 10.3 GMR・TMR・磁気記録技術

[17a-E7-34~39] 10.3 GMR・TMR・磁気記録技術

▲ [17a-E7-34] Perpendicular anisotropy in V/Fe1-xGdx (x = 0, 10, 20) multilayers

[17a-E7-35] スピネル型酸化物磁性体のKrイオン照射による磁化制御とパターン化

▲ [17a-E7-36] Fabrication of Magnetic Tunnel Junctions with High TMR Ratio and Low Magnetic Anisotropy for Highly Sensitive Magnetic Sensor

[17a-E7-37] CPP型Fe3Si/FeSi2人工格子における電流注入磁化反転

▼ [17a-E7-38] Investigation of interfacial specific resistance dependent on Fe-Co alloy composition in CPP-GMR-Tri-layer

▼ [17a-E7-39] RF injection locking in vortex-STO with MgO capped FeB free layer

[20a-E7-1~12] 10.3 GMR・TMR・磁気記録技術

▼ [20a-E7-1] スピントルク発振素子を利用した磁化方向の共鳴読み出し

▲ [20a-E7-2] Magnetic field sensor utilizing a spin-torque oscillator

▲ [20a-E7-3] ナノコンタクト型スピントルク発振素子の連続パルス磁場応答

▲ [20a-E7-4] Dependence of oscillation frequency of spin torque oscillator on applied field magnitude

▲ [20a-E7-5] <001>-textured polycrystalline current-perpendicular-to-plane pseudo spin-valves using full Heusler alloy Co2Fe(Ga0.5Ge0.5)

▼ [20a-E7-6] Structural and magneto-transport properties of CPP-GMR pseudo spin-valves with (110) epitaxial layers of Co2Fe(Ge0.5Ga0.5) Heusler alloy

[20a-E7-7] 下部SAF参照層型-低RA垂直MTJの作製

▲ [20a-E7-8] CoPt/Ru/CoPt参照層を持つFeB/MgO/FeB垂直磁化MTJ素子の磁化過程

▼ [20a-E7-9] CoFeB/Ta/[Co/Pd]強磁性電極を用いた磁気トンネル接合

△ [20a-E7-10] Degree of temperature dependence of TMR ratio of Co2MnSi/MgO/Co2MnSi MTJs as a function of Mn composition in Co2MnSi electrodes

[20a-E7-11] Magnetic tunnel junctions for bio-magnetic field sensor

▲ [20a-E7-12] Magnetic sensors based on MgO-magnetic tunnel junctions with perpendicular magnetized CoFeB sensing layer

[20p-E7-1~7] 10.3 GMR・TMR・磁気記録技術

▼ [20p-E7-1] Temperature dependence of electric-field effect on magnetic properties of Ta/CoFeB/MgO structures investigated by ferromagnetic resonance

▲ [20p-E7-2] Evaluation of voltage-torque through the voltage-induced ferromagnetic resonance

▲ [20p-E7-3] Sub-gigahertz ferromagnetic resonance in magnetic tunnel junction

▲ [20p-E7-4] Magnetization switching by two successive voltage pulses

▼ [20p-E7-5] Current-induced switching properties under perpendicular magnetic field in magnetic tunnel junctions with perpendicular magnetic easy axis

▼ [20p-E7-6] MgO/FeB/MgO積層膜における磁気異方性の上部MgO層厚依存性

▲ [20p-E7-7] X-ray magnetic circular dichroism study of magnetic anisotropy in Ta/CoFeB/MgO/Ta multilayers

▲ [17a-E7-34] Perpendicular anisotropy in V/Fe_1-xGd_x (x = 0, 10, 20) multilayers

[17a-E7-37] CPP型Fe₃Si/FeSi₂人工格子における電流注入磁化反転

▲ [20a-E7-5] <001>-textured polycrystalline current-perpendicular-to-plane pseudo spin-valves using full Heusler alloy Co₂Fe(Ga_0.5Ge_0.5)

▼ [20a-E7-6] Structural and magneto-transport properties of CPP-GMR pseudo spin-valves with (110) epitaxial layers of Co₂Fe(Ge_0.5Ga_0.5) Heusler alloy

△ [20a-E7-10] Degree of temperature dependence of TMR ratio of Co₂MnSi/MgO/Co₂MnSi MTJs as a function of Mn composition in Co₂MnSi electrodes