[18p-E1-1~14] Developments and Challenges for Resistance Change Memories Technology (抵抗変化メモリ技術の発展及び課題）

▲ [18p-E1-12] Effect of lowering resistivity of an insulator on the I-V characteristics of In/Al2O3/Al ReRAM

^○谷本優輔¹，YoshihumiHamada²，ShintaroOtsuka²，TomohiroShimizu²，ShosoShingubara²，TadatakaWatanabe¹，YoshikiTakano¹，KouichiTakase¹ (Nihon Univ.¹，Kansai Univ.²)

キーワード：ReRAM,ポーラスアルミナ